Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
2SC5065-Y(TE85L,F)
|
Toshiba Semiconductor and Storage | RF TRANS NPN 12V 7GHZ USM | 5206 | $0.00 | |
|
2SC4215-Y(TE85L,F)
|
Toshiba Semiconductor and Storage | RF TRANS NPN 30V 550MHZ USM | 11941 | $0.00 | |
|
MT3S16U(TE85L,F)
|
Toshiba Semiconductor and Storage | RF TRANS NPN 5V 4GHZ USM | 7898 | $0.00 | |
55GN01MA-TL-E
|
ON Semiconductor | RF TRANS NPN 10V 5.5GHZ 3MCP | 5979 | $0.00 | |
|
15GN03MA-TL-E
|
ON Semiconductor | RF TRANS NPN 10V 1.5GHZ 3MCP | 5629 | $0.00 | |
2SC2714-Y(TE85L,F)
|
Toshiba Semiconductor and Storage | RF TRANS NPN 30V 550MHZ SMINI | 5892 | $0.00 | |
15GN03CA-TB-E
|
ON Semiconductor | RF TRANS NPN 10V 1.5GHZ 3CP | 5245 | $0.00 | |
BFR182WH6327XTSA1
|
Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 | 4138 | $0.00 | |
|
2SC2714-O(TE85L,F)
|
Toshiba Semiconductor and Storage | RF TRANS NPN 30V 550MHZ SMINI | 4288 | $0.00 | |
MMBTH10LT3G
|
ON Semiconductor | RF TRANS NPN 25V 650MHZ SOT23-3 | 10000 | $0.00 |