Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
2SC5490A-TL-H ON Semiconductor RF TRANS NPN 10V 8GHZ 3SSFP 7765 $0.00
2SC5536A-TL-H ON Semiconductor RF TRANS NPN 12V 1.7GHZ 3SSFP 7887 $0.00
BFU530XRR NXP USA Inc. RF TRANS NPN 12V 11GHZ SOT143R 1320 $0.00
BFU530XAR NXP USA Inc. RF TRANS NPN 12V 11GHZ SOT143B 2732 $0.00
2SC5646A-TL-H ON Semiconductor RF TRANS NPN 4V 12.5GHZ 3SSFP 6705 $0.00
2SC5227A-5-TB-E ON Semiconductor RF TRANS NPN 10V 7GHZ 3CP 2431 $0.00
2SC5227A-4-TB-E ON Semiconductor RF TRANS NPN 10V 7GHZ 3CP 2805 $0.00
2SC4618TLP ROHM Semiconductor RF TRANS NPN 25V 300MHZ EMT3 1201 $0.00
ON5088,115 NXP USA Inc. RF TRANS NPN 10V 55GHZ 4DFP 2621 $0.00
2SC4915-O,LF Toshiba Semiconductor and Storage RF TRANS NPN 30V 550MHZ SSM 2848 $0.00