Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
BFR840L3RHESDE6327XTSA1 Infineon Technologies RF TRANS NPN 2.6V 75GHZ TSLP-3 4183 $0.00
BFP720ESDH6327XTSA1 Infineon Technologies RF TRANS NPN 4.7V 43GHZ SOT343 2316 $0.00
BFP620FH7764XTSA1 Infineon Technologies RF TRANS NPN 2.8V 65GHZ 4TSFP 2549 $0.00
BFP720H6327XTSA1 Infineon Technologies RF TRANS NPN 4.7V 45GHZ SOT343 1660 $0.00
BFP740H6327XTSA1 Infineon Technologies RF TRANS NPN 4.7V 42GHZ SOT343 1911 $0.00
BFP840ESDH6327XTSA1 Infineon Technologies RF TRANS NPN 2.25V 80GHZ SOT343 2005 $0.00
BFP520H6327XTSA1 Infineon Technologies RF TRANS NPN 3.5V 45GHZ SOT343-4 2505 $0.00
BFR193L3E6327XTMA1 Infineon Technologies RF TRANS NPN 12V 8GHZ TSLP-3-1 9903 $0.00
BFP181E7764HTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT143-4 2452 $0.00
BFR460L3E6327XTMA1 Infineon Technologies RF TRANS NPN 5.8V 22GHZ TSLP-3-1 24485 $0.00