WeEn Semiconductors BYV30X-600PQ

Manufacturer
WeEn Semiconductors
Model
BYV30X-600PQ
Datasheet
BYV30X-600PQ PDF
Description
DIODE GEN PURP 600V 30A TO220F
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Supplier Device Package D2PAK
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 170µA @ 650V
Voltage - DC Reverse (Vr) (Max) 650V
Speed No Recovery Time > 500mA (Io)
Current - Average Rectified (Io) 4A
Series -
Operating Temperature - Junction 175°C (Max)
Packaging Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If 1.7V @ 4A
Diode Type Silicon Carbide Schottky
Part Status Discontinued at Digi-Key
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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