WeEn Semiconductors BYV30JT-600PQ
- Manufacturer
- WeEn Semiconductors
- Model
- BYV30JT-600PQ
- Datasheet
- BYV30JT-600PQ PDF
- Description
- DIODE GEN PURP 600V 30A TO-3P
- Availability
- OUT OF STOCK
Product Detail
| Attribute Name | Attribute Value |
|---|---|
| Series | - |
| Operating Temperature - Junction | 175°C (Max) |
| Packaging | Tube |
| Voltage - Forward (Vf) (Max) @ If | 1.55V @ 30A |
| Diode Type | Standard |
| Part Status | Active |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Capacitance @ Vr, F | - |
| Supplier Device Package | TO-247-2 |
| Reverse Recovery Time (trr) | 75ns |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Average Rectified (Io) | 30A |
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