WeEn Semiconductors BYV29X-600PQ

Manufacturer
WeEn Semiconductors
Model
BYV29X-600PQ
Datasheet
BYV29X-600PQ PDF
Description
DIODE GEN PURP 600V 9A TO220F
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Reverse Recovery Time (trr) 1ns
Current - Reverse Leakage @ Vr 200nA @ 40V
Voltage - DC Reverse (Vr) (Max) 50V
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io) 15mA (DC)
Series -
Operating Temperature - Junction -65°C ~ 175°C
Packaging Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If 950mV @ 15mA
Diode Type Schottky
Part Status Obsolete
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Capacitance @ Vr, F 2.1pF @ 0V, 1MHz
Supplier Device Package DO-35

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