Vishay / Siliconix VQ2001P-2

Manufacturer
Vishay / Siliconix
Model
VQ2001P-2
Datasheet
VQ2001P-2 PDF
Description
MOSFET 4P-CH 30V 0.6A 14DIP
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Supplier Device Package -
Gate Charge (Qg) (Max) @ Vgs -
Series -
Drain to Source Voltage (Vdss) 30V
FET Type 2 N and 2 P-Channel
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V
Packaging Tube
Current - Continuous Drain (Id) @ 25°C 850mA, 600mA
FET Feature Standard
Part Status Obsolete
Power - Max 2W
Package / Case -
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1Ohm @ 1A, 12V

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