Vishay / Siliconix SIZ926DT-T1-GE3

Manufacturer
Vishay / Siliconix
Model
SIZ926DT-T1-GE3
Datasheet
SIZ926DT-T1-GE3 PDF
Description
MOSFET 2 N-CH 25V 8-POWERPAIR
Availability
IN STOCK

Stock: 4998

Product Detail

Attribute Name Attribute Value
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
Supplier Device Package Die
Series eGaN®
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 100V
Packaging Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
FET Feature GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 1.7A
Part Status Active
Power - Max -
Mounting Type Surface Mount
Package / Case Die
Vgs(th) (Max) @ Id 2.5V @ 600µA

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