Vishay / Siliconix SI7909DN-T1-GE3

Manufacturer
Vishay / Siliconix
Model
SI7909DN-T1-GE3
Datasheet
SI7909DN-T1-GE3 PDF
Description
MOSFET 2P-CH 12V 5.3A 1212-8
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
FET Feature Logic Level Gate
Current - Continuous Drain (Id) @ 25°C -
Part Status Obsolete
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 45mOhm @ 3.5A, 10V
Supplier Device Package 8-TSSOP
Series TrenchFET®
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Packaging Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds -

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