Vishay / Siliconix SI4966DY-T1-E3

Manufacturer
Vishay / Siliconix
Model
SI4966DY-T1-E3
Datasheet
SI4966DY-T1-E3 PDF
Description
MOSFET 2N-CH 20V 8SOIC
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
FET Feature Logic Level Gate
Current - Continuous Drain (Id) @ 25°C 16A, 18A
Part Status Obsolete
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 6.6mOhm @ 16A, 10V
Supplier Device Package Power56
Series PowerTrench®
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 25V
Packaging Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 13V

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