Vishay / Siliconix SI4931DY-T1-E3

Manufacturer
Vishay / Siliconix
Model
SI4931DY-T1-E3
Datasheet
SI4931DY-T1-E3 PDF
Description
MOSFET 2P-CH 12V 6.7A 8-SOICs
Availability
IN STOCK

Stock: 21357

Product Detail

Attribute Name Attribute Value
Vgs(th) (Max) @ Id 1V @ 350µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 18mOhm @ 8.9A, 4.5V
Series TrenchFET®
Supplier Device Package 8-SO
FET Type 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V
Packaging Digi-Reel®
Drain to Source Voltage (Vdss) 12V
FET Feature Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds -
Part Status Active
Current - Continuous Drain (Id) @ 25°C 6.7A
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4931

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