Vishay / Siliconix SI3529DV-T1-E3

Manufacturer
Vishay / Siliconix
Model
SI3529DV-T1-E3
Datasheet
SI3529DV-T1-E3 PDF
Description
MOSFET N/P-CH 40V 2.5A 6-TSOP
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
FET Feature Logic Level Gate
Current - Continuous Drain (Id) @ 25°C 2.5A, 1.95A
Part Status Obsolete
Power - Max 1.4W
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 125mOhm @ 2.2A, 10V
Supplier Device Package 6-TSOP
Series TrenchFET®
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 40V
Packaging Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 20V

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