Transphorm TPD3215M

Manufacturer
Transphorm
Model
TPD3215M
Datasheet
TPD3215M PDF
Description
GANFET 2N-CH 600V 70A MODULE
Availability
IN STOCK

Stock: 67

$178.83

Product Detail

Attribute Name Attribute Value
Packaging Bulk
Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 25V
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 18A
Part Status Active
Power - Max 357W
Mounting Type Chassis Mount
Package / Case SP4
Vgs(th) (Max) @ Id 5V @ 2.5mA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 540mOhm @ 9A, 10V
Supplier Device Package SP4
Series POWER MOS 7®
Gate Charge (Qg) (Max) @ Vgs 154nC @ 10V
FET Type 4 N-Channel (H-Bridge)
Drain to Source Voltage (Vdss) 1000V (1kV)

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