Toshiba Semiconductor and Storage MT3S20P(TE12L,F)

Manufacturer
Toshiba Semiconductor and Storage
Model
MT3S20P(TE12L,F)
Datasheet
MT3S20P(TE12L,F) PDF
Description
RF TRANS NPN 12V 7GHZ PW-MINI
Availability
IN STOCK

Stock: 610

Product Detail

Attribute Name Attribute Value
Frequency - Transition 11GHz
Supplier Device Package SOT-223
Gain 10.5dB
Noise Figure (dB Typ @ f) 1.4dB @ 1.8GHz
Series -
Current - Collector (Ic) (Max) 60mA
Packaging Digi-Reel®
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 30mA, 8V
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 12V
Power - Max 1W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Type NPN
Base Part Number BFU580
Operating Temperature -40°C ~ 150°C (TJ)

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