Taiwan Semiconductor Corporation TSM1N45DCS RL

Manufacturer
Taiwan Semiconductor Corporation
Model
TSM1N45DCS RL
Datasheet
TSM1N45DCS RL PDF
Description
MOSFET N-CHANNEL
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Package / Case 6-VDFN Exposed Pad
Vgs(th) (Max) @ Id 1V @ 250µA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 110mOhm @ 2.8A, 4.5V
Supplier Device Package DFN2020-6U
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V
Series -
Drain to Source Voltage (Vdss) 20V
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 15V
FET Feature Schottky Diode (Isolated)
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Part Status Obsolete
Power - Max 700mW (Ta)
Mounting Type Surface Mount

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