Taiwan Semiconductor Corporation HS3JB R5G

Manufacturer
Taiwan Semiconductor Corporation
Model
HS3JB R5G
Datasheet
HS3JB R5G PDF
Description
DIODE GEN PURP 600V 3A DO214AA
Availability
IN STOCK

Stock: 3019

Product Detail

Attribute Name Attribute Value
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Capacitance @ Vr, F 25pF @ 4V, 1MHz
Supplier Device Package DO-201AD
Current - Reverse Leakage @ Vr 5µA @ 1000V
Voltage - DC Reverse (Vr) (Max) 1000V
Current - Average Rectified (Io) 3A
Speed Standard Recovery >500ns, > 200mA (Io)
Operating Temperature - Junction -55°C ~ 150°C
Series -
Voltage - Forward (Vf) (Max) @ If 1V @ 3A
Packaging Cut Tape (CT)
Diode Type Standard
Part Status Active

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