ROHM Semiconductor SH8K32GZETB

Manufacturer
ROHM Semiconductor
Model
SH8K32GZETB
Datasheet
SH8K32GZETB PDF
Description
4V DRIVE NCH+NCH MOSFET. COMPLEX
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Power - Max 5.2W (Ta), 69.4W (Tc)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id 2.3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.5mOhm @ 7A, 10V
Supplier Device Package PowerPAK® 1212-8SCD
Series TrenchFET® Gen IV
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
FET Type 2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss) 25V
Packaging Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 10V
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 30.5A (Ta), 60A (Tc)
Part Status Active

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