ON Semiconductor HGT1S3N60A4DS9A

Manufacturer
ON Semiconductor
Model
HGT1S3N60A4DS9A
Datasheet
HGT1S3N60A4DS9A PDF
Description
IGBT 600V 17A 70W D2PAK
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Package / Case TO-220-3
Test Condition 400V, 5A, 20Ohm, 15V
Switching Energy 75µJ (on), 59µJ (off)
Td (on/off) @ 25°C 6ns/44ns
Series -
Operating Temperature -55°C ~ 150°C (TJ)
IGBT Type Field Stop
Supplier Device Package TO-220-3
Packaging Tube
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 5A
Input Type Standard
Reverse Recovery Time (trr) 30ns
Gate Charge 19.5nC
Current - Collector (Ic) (Max) 10A
Part Status Obsolete
Current - Collector Pulsed (Icm) 15A
Power - Max 81W
Voltage - Collector Emitter Breakdown (Max) 600V
Mounting Type Through Hole

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