Microsemi Corporation JAN1N5804US

Manufacturer
Microsemi Corporation
Model
JAN1N5804US
Datasheet
JAN1N5804US PDF
Description
DIODE GEN PURP 100V 2.5A D5A
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Capacitance @ Vr, F 60pF @ 10V, 1MHz
Reverse Recovery Time (trr) 30ns
Current - Reverse Leakage @ Vr 5µA @ 50V
Voltage - DC Reverse (Vr) (Max) 50V
Current - Average Rectified (Io) 6A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction -65°C ~ 175°C
Series Military, MIL-PRF-19500/477
Voltage - Forward (Vf) (Max) @ If 875mV @ 4A
Packaging Bulk
Diode Type Standard
Part Status Discontinued at Digi-Key
Mounting Type Through Hole
Package / Case B, Axial

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