EPC EPC2106ENGRT

Manufacturer
EPC
Model
EPC2106ENGRT
Datasheet
EPC2106ENGRT PDF
Description
GAN TRANS 2N-CH 100V BUMPED DIE
Availability
IN STOCK

Stock: 9587

Product Detail

Attribute Name Attribute Value
FET Type 2 N-Channel (Dual) Common Source
Drain to Source Voltage (Vdss) 120V
Packaging Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
FET Feature GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 3.4A
Part Status Active
Power - Max -
Mounting Type Surface Mount
Package / Case Die
Vgs(th) (Max) @ Id 2.5V @ 700µA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
Supplier Device Package Die
Series eGaN®
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V

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