EPC EPC2102ENG
- Manufacturer
- EPC
- Model
- EPC2102ENG
- Datasheet
- EPC2102ENG PDF
- Description
- GAN TRANS 2N-CH 60V BUMPED DIE
- Availability
- OUT OF STOCK
Product Detail
| Attribute Name | Attribute Value |
|---|---|
| Supplier Device Package | Die |
| Series | eGaN® |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 5V |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 80V |
| Packaging | Bulk |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 40V |
| FET Feature | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Part Status | Active |
| Power - Max | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 5V |
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