EPC EPC2100ENG

Manufacturer
EPC
Model
EPC2100ENG
Datasheet
EPC2100ENG PDF
Description
GAN TRANS 2N-CH 30V BUMPED DIE
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
FET Feature GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Part Status Discontinued at Digi-Key
Power - Max -
Mounting Type Surface Mount
Package / Case Die
Vgs(th) (Max) @ Id 2.5V @ 2mA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V
Supplier Device Package Die
Series eGaN®
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 60V
Packaging Tray
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V

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product package